MMBT3904 MMBT3904WT1 3904 1AM NPN transistor 40V 0.2A SOT23 SMD

Transistor MMBT3904WT1

• Model: MMBT3904WT1
• Designation on the case: 1AM
• Type: NPN low power bipolar transistor
• Housing: SOT-23
• Quantity 1 piece

Maximum parameters:

• Collector-emitter voltage (VCE): 40 V
• Collector-base voltage (VCB): 60 V
• Emitter-base voltage (VEB): 6,0 V
• Continuous collector current (IC): 200 mA
• Loss power at TA = 25 °C (PD): 150 mW
• Thermal junction-to-surround resistance (RθJA): 833 °C/W
• Operating and storage temperature range (TJ, Tstg): -55 °C ÷ +150 °C

Thermal characteristics:

• Thermal junction-to-surround resistance (RθJA): 833 °C/W
• Maximum joint temperature (TJ): 150 °C
• Electrical characteristics (TA = 25 °C):
• Collector-emitter breakdown voltage V(BR)CEO: ≥ 40 V (IC = 1 mA, IB = 0)
• Collector-base breakdown voltage V(BR)CBO: ≥ 60 V (IC = 10 µA, IE = 0)
• Emitter-to-base breakdown voltage V(BR)EBO: ≥ 6,0 V (IE = 10 µA, IC = 0)
• Base-emitter leakage current (IBL): ≤ 50 nA (VCE = 30 V, VEB = 3 V)
• Collector leakage current (ICEX): ≤ 50 nA (VCE = 30 V, VEB = 3 V)

Collector-emitter saturation voltage VCE(sat):

• ≤ 0.2 V (IC = 10 mA, IB = 1 mA)
• ≤ 0.3 V (IC = 50 mA, IB = 5 mA)

Base-emitter saturation voltage VBE(sat):

• 0.65 ÷ 0.85 V (IC = 10 mA)
• 0.95 V (IC = 50 mA)

Dynamic parameters:

• Limit frequency (fT): 300 MHz (IC = 10 mA, VCE = 20 V)
• Input capacitance (Cibo): 8 pF
• Output capacitance (Cobo): 4 pF
• Noise factor (NF): ≤ 5 dB

Switching parameters:

• Delay time (td): 35 ns
• Rise time (tr): 35 ns
• Storage time (ts): 200 ns
• Descent time (tf): 50 ns
• Complementary pair

The complementary pair for the MMBT3904WT1 transistor is MMBT3906WT1 - a PNP transistor.

Replacements: BPMBT3904, BC847, MMBT2222A, MMST2222A, KTN2222AU

Realistic picture