| Model | G60N100BNTD |
| Marking | G60N100 BNDT |
| Type | Trench IGBT with fast recovery diode FRD |
| Collector-emitter voltage VCES | 1000 V |
| Collector current IC | 60 A, at 100°C – 30 A |
| Power dissipation Ptot | 250 W |
| VCE(sat) | Typ. 2.1 V at 60 A |
| Turn-off delay | Typ. 220 ns |
| Diode | Built-in Fast Recovery Diode – FRD |
| Package | TO-264 |
| Weight | 9.5 g |
| Product | G60N100 IGBT transistor |
| Model | G60N100BNTD |
| VCES | 1000 V |
| IC | 60 A, at 100°C – 30 A |
| Ptot | 250 W |
| Package | TO-264 |
| ✓ | Check the model, pinout and compatibility with the repaired device before installation. |
| ✓ | Do not exceed VCES 1000 V or the permitted current and power ratings. |
| ✓ | Provide adequate cooling and correct heatsink mounting. |
| ✓ | Do not use a component with a cracked package, damaged leads or signs of overheating. |
| ✓ | Use standard ESD precautions during handling and installation. |
| Package | TO-264 |
| Heatsink | Ensure correct pressure, heat dissipation and electrical insulation where required by the equipment design. |
| Soldering | Avoid excessive or prolonged heating of the leads and package. |
| Inspection | After installation, check wiring, insulation and absence of shorts. |
| Manufacturer (Private Label) (EU) 2023/988 (GPSR) | |
|---|---|
| Name: | Superelektronika sp. z o.o. |
| Address: | ul. gen. K. Sosnkowskiego 26/83 05-300 Mińsk Mazowiecki, Poland |
| E-mail: | sklep@superelektronika.pl |
| Responsible Person (EU) 2023/988 (GPSR) | |
| Name: | Superelektronika sp. z o.o. |
| Address: | ul. gen. K. Sosnkowskiego 26/83 05-300 Mińsk Mazowiecki, Poland |
| E-mail: | sklep@superelektronika.pl |
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