FJP13009 high voltage, fast switching NPN power transistor
- Model: FJP13009 FJP13009H2TU FJP13009TU
- Designation: J13009-2 J13009
- Type: NPN Power Transistor (fast switching, high voltage)
- VCBO (collector-base voltage): 700 V
- VCEO (collector-emitter voltage): 400 V
- VEBO (emitter-base voltage): 9 V
- IC (collector current, DC): 12 A
- ICP (collector current, pulsed): 24 A
- IB (base current): 6 A
- PC (loss power at TC = 25°C): 100 W
- Operating temperature (TJ): 150°C max.
- hFE (current gain):
for IC = 5A: 8-40
for IC = 8A: 6-30
- VCE(sat) (collector-emitter saturation voltage):
IC = 5A, IB = 1A → 1V
IC = 8A, IB = 1.6A → 1.5V
IC = 12A, IB = 3A → 3V
- VBE(sat) (base-emitter saturation voltage):
IC = 5A, IB = 1A → 1.2V
IC = 8A, IB = 1.6A → 1.6V
- Limit frequency (fT): 4 MHz
- Switching time:
- ON (tON): 1.1 µs
- holding time (tSTG): 3 µs
- switch-off time (tF): 0.7 µs
- Housing: TO-220
- Weight: 2.1g
Components new unsoldered, full length legs
Photo real
Real measurement
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